Energy Level Evolution and Oxygen Exposure of Fullerene/Black Phosphorus Interface

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成果类型：

期刊论文

作者：

Wang, Can;Niu, Dongmei*;Wang, Shitan;Zhao, Yuan;Tan, Wenjun;...

通讯作者：

Niu, Dongmei;Gao, Yongli

作者机构：

[Tan, Wenjun; Wang, Shitan; Li, Lin; Gao, Yongli; Xie, Haipeng; Wang, Can; Niu, Dongmei; Huang, Han; Niu, DM; Gao, YL; Zhao, Yuan] Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410012, Hunan, Peoples R China.

[Deng, Yunlai; Wang, Can] Cent S Univ, Light Alloy Res Inst, Changsha 410083, Hunan, Peoples R China.

[Li, Lin] Cent South Univ Forestry & Technol, Sch Elect & Informat Engn, Changsha 410004, Hunan, Peoples R China.

[Deng, Yunlai] Cent S Univ, Sch Mat Sci & Engn, Changsha 410083, Hunan, Peoples R China.

[Gao, Yongli] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.

通讯机构：

[Niu, DM; Gao, YL] C

[Gao, Yongli] U

Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410012, Hunan, Peoples R China.

Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.

语种：

英文

关键词：

Charge transfer;Electron transitions;Fullerenes;Oxidation;Oxygen;Phosphorus;Photoelectron spectroscopy;Photoelectrons;Photons;Single crystals;Ultraviolet photoelectron spectroscopy;Density functional theory simulations;Electron transfer barriers;Fullerenes (C60);N-type semiconductors;Oxygen exposure;Photoelectron spectrum;Protection layers;Density functional theory

期刊：

Journal of Physical Chemistry Letters

ISSN：

1948-7185

年：

2018

卷：

期：

页码：

5254-5261

DOI：

10.1021/acs.jpclett.8b02293

基金类别：

This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 51173205 and 11334014) and the Fundamental Research Funds for the Central Universities of Central South University (2016zzts049). Y.D. acknowledges the support from the Chinese National Science Foundation (project no. 51375503). Y.G. acknowledges the support by the National Science Foundation (Grant Nos. DMR-1303742 and CBET-1437656).

机构署名：

本校为其他机构

院系归属：

计算机与信息工程学院

摘要：

The heteroepitaxial growth of fullerene (C60) on single-crystal black phosphorus (BP) has been studied using low-energy electron diffraction, X-ray and ultraviolet photoelectron spectroscopy, and density functional theory simulation. The occupied orbital features from C60 observed in the photoelectron spectra for C60/BP interface are slightly broadened at higher coverages of C60 and exhibit no direct evidence of hybridization, demonstrating that the C60/BP interaction is physisorption. Oxygen exposure of interface leads to obvious oxidation of ...

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Energy Level Evolution and Oxygen Exposure of Fullerene/Black Phosphorus Interface

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