This experiment deals with the influence of co-doping with oxygen and hydrogen and also annealing parameters, temperature and excitation power on the Er related photoluminescence (PL) of silicon. The ultimate goal is to optimise the PL intensity of the Er3+ internal transition to make at room-temperature luminescence possible. Silicon is a very inefficient light emitter, because of the low radiative recombination rate due to the indirect band gap. However, by adding optically active impurities such as erbium, Si can be made luminescent. Silicon is an ideal material for the fabrication of optic...