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Influence of Mg2+ Substitution for Sn4+ on Electronic Structure and Optical Properties of SnO2

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成果类型:
期刊论文
作者:
He, Haiying;Wu, Zibin;Chen, Yu;Yang, Zhihao;Yu, Minghuai;...
通讯作者:
Chen, Hong
作者机构:
[He, Haiying; Fan, Touwen; Chen, Hong; Wu, Zibin; Yang, Zhihao; Chen, Yu] Foshan Univ, Sch Mat Sci & Energy Engn, Foshan 528000, Guangdong, Peoples R China.
[Chen, Hong] Cent South Univ Forestry & Technol, Coll Mat Sci & Engn, Changsha 410004, Hunan, Peoples R China.
[Yu, Minghuai] Hainan Univ, Sch Sci, Haikou 570228, Hainan, Peoples R China.
通讯机构:
[Chen, Hong] F
[Chen, Hong] C
Foshan Univ, Sch Mat Sci & Energy Engn, Foshan 528000, Guangdong, Peoples R China.
Cent South Univ Forestry & Technol, Coll Mat Sci & Engn, Changsha 410004, Hunan, Peoples R China.
语种:
英文
关键词:
SnO2;First-Principles Calculation;Electronic Structure;Dielectric Function
期刊:
Nanoscience and Nanotechnology Letters
ISSN:
1941-4900
年:
2019
卷:
11
期:
10
页码:
1387-1394
基金类别:
National Natural Science Foundation of ChinaNational Natural Science Foundation of China [11747090]; key Project of Department of Education of Guangdong Province [2016GCZX008]
机构署名:
本校为通讯机构
院系归属:
材料科学与工程学院
摘要:
First-principles calculation based on density functional theory (DFT) were employed to theoretically study the influence of partially replacing Sn4+ by Mg2+ on the electronic structure and optical properties of SnO2. The calculation results revealed that the Femi level shifted into the valence band, thereby indicating a p-type conductivity character. The energy band gap for SnO2 was found to be narrowed due to Mg2+ doping. Considering that the energy level for Mg 3s orbitals is comparable to that of O 2p orbitals, the localization behavior in the SnO2 valence band was modified. The imaginary p...

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