Fullerene (C60) interlayer modification on the electronic structure and the film growth of 2,7-diocty[1]benzothieno-[3,2-b]benzothiophene on SiO2

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作者信息关键词期刊信息基础信息归属信息摘要

成果类型：

期刊论文

作者：

Zhao, Yuan;Liu, Xiaoliang*;Lyu, Lu;Li, Lin;Tan, Wenjun;...

通讯作者：

Liu, Xiaoliang;Gao, Yongli

作者机构：

[Tan, Wenjun; Li, Lin; Wang, Shitan; Gao, Yongli; Liu, Xiaoliang; Gao, YL; Xie, Haipeng; Wang, Can; Niu, Dongmei; Huang, Han; Lyu, Lu; Zhao, Yuan] Cent S Univ, Inst Super Microstruct & Ultrafast Proc Adv Mat, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China.

[Lyu, Lu] Univ Kaiserslautern, Dept Phys, Erwin Schrodinger Str 46, D-67663 Kaiserslautern, Germany.

[Lyu, Lu] Univ Kaiserslautern, Res Ctr OPTIMAS, Erwin Schrodinger Str 46, D-67663 Kaiserslautern, Germany.

[Li, Lin] Cent South Univ Forestry & Technol, Sch Elect & Informat Engn, Changsha 410004, Hunan, Peoples R China.

[Gao, Yongli] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.

通讯机构：

[Liu, XL; Gao, YL] C

Cent S Univ, Inst Super Microstruct & Ultrafast Proc Adv Mat, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China.

语种：

英文

关键词：

Ultra-thin C-60 insertion layer;2,7-Diocty[1]benzothieno-[3,2-b]benzothiophene (C8-BTBT);Electronic structure;Molecular packing;PES(UPS, XPS);AFM

期刊：

Synthetic Metals

ISSN：

0379-6779

年：

2017

卷：

229

页码：

1-6

DOI：

10.1016/j.synthmet.2017.04.020

基金类别：

National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [51673217, 11334014]; National Science FoundationNational Science Foundation (NSF) [DMR-1303742, CBET-1437656]

机构署名：

本校为其他机构

院系归属：

计算机与信息工程学院

摘要：

Modification by ultra-thin fullerene (C60) insertion layer of about 1 monolayer on the electronic structure and the film growth of 2,7-diocty[1]benzothieno-[3,2-b]benzothiophene (C8-BTBT) on silicon oxide (SiO2) is investigated using ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). It is found that the ultra-thin C60insertion layer doesn't induce an ambipolar charge transport characteristic but it indeed lifts up the energy levels of C8-BTBT, resulting in p-doping and hole accumulation at the semico...

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Fullerene (C60) interlayer modification on the electronic structure and the film growth of 2,7-diocty[1]benzothieno-[3,2-b]benzothiophene on SiO2

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