Interfacial electronic structures of MoOx/mixed perovskite photodetector

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成果类型：

期刊论文

作者：

Li, Lin;Wang, Chunhua;Wang, Can;Tong, Sichao;Zhao, Yuan;...

通讯作者：

Liu, Xiaoliang;Gao, Yongli

作者机构：

[Li, Lin] Cent S Univ, State Key Lab Powder Met, Changsha 410083, Hunan, Peoples R China.

[Yang, Junliang; Li, Lin; Gao, Yongli; Liu, Xiaoliang; Gao, YL; Xiao, Si; Wang, Can; Shi, Jiao; He, Jun; Niu, Dongmei; Tong, Sichao; Wang, Chunhua; Xie, Haipeng; Xia, Huayan; Huang, Han; Shen, Jianqiang; Zhao, Yuan] Cent S Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Hunan, Peoples R China.

[Li, Lin] Cent South Univ Forestry & Technol, Coll Elect & Informat Engn, Changsha 410004, Hunan, Peoples R China.

[Gao, Yongli] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.

通讯机构：

[Liu, XL; Gao, YL] C

Cent S Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Hunan, Peoples R China.

语种：

英文

关键词：

Binding energy;Electronic structure;Interfaces (materials);Molybdenum oxide;Perovskite;Photodetectors;Photoelectron spectroscopy;Photons;Semiconductor quantum wells;Chemical interactions;Energy level alignment;FA0.4MA0.6PbI3;Interfacial electronic structure;Interfacial potential;MoOx;Ultraviolet photoemission spectroscopy;X ray photoemission spectroscopy;Lead compounds

期刊：

Organic Electronics

ISSN：

1566-1199

年：

2019

卷：

页码：

162-169

DOI：

10.1016/j.orgel.2018.11.009

基金类别：

This work is supported in part by the National Key Research and Development Program of China (Grant No. 2017YFA0206600 ) and National Natural Science Foundation of China (Grant No. 51673217 and 11334014 ). Y. Gao acknowledges the support of the National Science Foundation (Grant No. DMR-1303742 and CBET-1437656 ) and National Key Laboratory Open Project Foundation (Grant No. 165000001 ). This work is supported in part by the National Key Research and Development Program of China (Grant No. 2017YFA0206600) and National Natural Science Foundation of China (Grant No. 51673217 and 11334014). Y. Gao acknowledges the support of the National Science Foundation (Grant No. DMR-1303742 and CBET-1437656) and National Key Laboratory Open Project Foundation (Grant No. 165000001).

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院系归属：

计算机与信息工程学院

摘要：

A systematical investigation on the electronic structures of the interface of MoOx/mixed organic cations perovskite (FA0.4MA0.6PbI3) was carried out with ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS), photoluminescence (PL) and absorption spectra (ABS). It is found that the pristine FA0.4MA0.6PbI3 film behaves as heavy n-type semiconductor. Some weakly chemical interactions are detected at the interface of MoOx/FA0.4MA0.6PbI3 from the evolution of the ratio of Mo5+/Mo6+ and attenuation of I. The results of...

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Interfacial electronic structures of MoOx/mixed perovskite photodetector

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