This work was supported by the Central South University of Forestry and Technology Foundation, China (Grant No. 0409-2016 and 0z85-2018).
机构署名：
本校为第一且通讯机构
院系归属：
计算机与信息工程学院
摘要：
A numerical model of carrier saturation velocity and drain current for the monolayer graphene field effect transistors (GFETs) is proposed by considering the exponential distribution of potential fluctuations in disordered graphene system. The carrier saturation velocity of GFET is investigated by the two-region model, and it is found to be affected not only by the carrier density, but also by the graphene disorder. The numerical solutions of the carrier density and carrier saturation velocity in the disordered GFETs yield clear and physical-based results. The simulated results of the drain cu...
