In this study, a simple wet chemical method was used to prepare p-n heterojunction photoelectric composites (Bi2S3@g-C3N4). The p-n junctions were formed to facilitate charge transfer as well as strongly suppress electron -hole pair recombination, thus enhancing the photoelectrochemical (PEC) characteristics. Particularly, according to the transient surface photocurrent response, the photocurrent intensity of the prepared composites was 2.98 times higher relative to the pristine g-C3N4 material. The photocurrent signal revealed the prepared novel PEC sensor composed of Bi2S3@g-C3N4 composite m...
