10.13039/501100001809-National Natural Science Foundation of China (Grant Number: 62204084)
Research Foundation of Education Bureau of Hunan Province (Grant Number: 21B0267)
10.13039/501100014879-Central South University of Forestry and Technology Foundation (Grant Number: 0409-2016 and 0z85-2018)
机构署名：
本校为第一且通讯机构
院系归属：
计算机与信息工程学院
摘要：
Electrolytic double-layer gate insulation transistors (EDLGITs) have gained significant attention recently due to their features for achieving high-density charge accumulation and low operating voltage. This is primarily attributed to the large capacitance of the electrolyte insulation in these devices. This article proposes a physical model for the capacitance of the electrolytic double-layer gate insulation (EDLGI) and the drain current of amorphous InGaZnO (a-IGZO) EDLGITs based on the channel surface potential. It is demonstrated that the EDLGI capacitance, which comprises the compact-laye...
