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Modification of Ultrathin NPB Interlayer on the Electronic Structures of the CH3NH3PbI3/NPB/MoO3 Interface

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成果类型:
期刊论文
作者:
Li, Lin;Liu, Xiaoliang*;Lyu, Lu;Wu, Runsheng;Liu, Peng;...
通讯作者:
Liu, Xiaoliang;Gao, Yongli
作者机构:
[Yang, Junliang; Li, Lin; Wang, Hongyang; Wu, Runsheng; Niu, Dongmei; Liu, Peng; Zhang, Yuhe; Liu, Xiaoliang; Lyu, Lu; Zhao, Yuan] Cent S Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Hunan, Peoples R China.
[Li, Lin] Cent South Univ Forestry & Technol, Sch Elect & Informat Engn, Changsha 410004, Hunan, Peoples R China.
[Gao, Yongli] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.
通讯机构:
[Liu, Xiaoliang] C
[Gao, Yongli] U
Cent S Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Hunan, Peoples R China.
Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA.
语种:
英文
关键词:
Electronic structure;Molecular orbitals;Molybdenum oxide;Photoelectrons;Photons;Power supply circuits;Ultraviolet photoelectron spectroscopy;Uninterruptible power systems;Conduction-band minimum;Energy level alignment;Highest occupied molecular orbital;Hole extractions;Insertion layers;Power efficiency;Small energy;Valence-band maximums;X ray photoelectron spectroscopy
期刊:
Journal of Physical Chemistry C
ISSN:
1932-7447
年:
2016
卷:
120
期:
32
页码:
17863-17871
基金类别:
We thank the financial support by the National Natural Science Foundation of China (Grant No. 51173205, 11334014) and the National Science Foundation (Grant No. CBET-1437656, DMR-1303742). H.W. acknowledges the National Training Programs of Innovation and Entrepreneurship for Undergraduates (1401130141).
机构署名:
本校为其他机构
院系归属:
计算机与信息工程学院
摘要:
Modification of the ultrathin N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) insertion layer on the electronic structures of the CH3NH3PbI3 (MAPbI3)/MoO3 interfaces is investigated using ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). It is found that when an ultrathin NPB insertion layer of 16 Å is inserted between MAPbI3 and MoO3, the chemical reaction between the latter two can be effectively suppressed, and a favorable energy-level alignment is achieved. The valence band ma...

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