期刊论文

Fabrication of practical 1730 nm waveband laser diodes with buried heterojunction structures

Lin, T.(lintao@red.semi.ac.cn)

中文

半导体学报

Chinese Journal of Semiconductors

0253-4177

2006

27

8

1467-1470

本校为其他机构

报道了应用于医疗器械的InP基1730nm波段半导体激光器．外延片采用低压金属有机物化学气相沉积法（MOCVD）生长，有源区为5个周期的InGaAs量子阱层和InGaAsP垒层．器件采用pnpn结限制掩埋结构，有源区脊宽2μm、腔长300μm．室温下腔面镀膜后激光器管芯的阈值电流为18±5mA，8mW输出功率时的工作电流为60±5mA．采用TO封装后，100mA工作电流下激光器的输出功率大于5mW，输出波长为1732±10nm，高温恒流加速老化筛选实验表明，器件具有长期工作的可靠性，满足实用化要求。

1730 nm wavelength semiconductor laser diodes (LDs) for use in medical appliances are reported. The LD structure is grown by low-pressure MOCVD, and the active region consists of five periods of InGaAs quantum wells and InGaAsP quantum barriers. The LD has a pnpn-confined buried heterojunction structure, whose ridge width and cavity length are 2 μm and 300 μm, respectively. After facet coating, the threshold current of the LDs is about 18 ±5 mA at room temperature, and the operating current is about 60 ±5 mA at an output power of 8 mW. For the TO-packaged LDs, the output po...