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Highly spin-polarized current in an antiferromagnetic MnBi2Te4 film

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成果类型:
期刊论文
作者:
Liu, Gen-Hua;Yan, Jin-Xiang
通讯作者:
Liu, GH
作者机构:
[Liu, Gen-Hua; Yan, Jin-Xiang; Liu, GH] Cent South Univ Forestry & Technol, Coll Comp & Informat Engn, Changsha 410004, Peoples R China.
通讯机构:
[Liu, GH ] C
Cent South Univ Forestry & Technol, Coll Comp & Informat Engn, Changsha 410004, Peoples R China.
语种:
英文
关键词:
Spintronics;Spin polarization;Antiferromagnetic;MnBi2Te4 film;Electronic transport
期刊:
Physics Letters A
ISSN:
0375-9601
年:
2024
卷:
503
页码:
129420
基金类别:
Hunan Provincial Natural Science Foundation#&#&#2018JJ2668 National Natural Science Foundation of China#&#&#11547051
机构署名:
本校为第一且通讯机构
院系归属:
计算机与信息工程学院
摘要:
The spin polarization of current plays an important role in the performance of spintronic devices. Therefore, a highly spin -polarized current source has always been explored through various methods. We study the effects of magnetic order on the electronic structures of antiferromagnetic (AFM) MnBi 2 Te 4 films. A significant spin splitting is found in the surface states of a AFM MnBi 2 Te 4 film with three septuple layers (SLs). The AFM film can show typical metallic behavior for spin -down electrons, and exhibit a semiconductor or insulator behavior with a band gap at the Fermi level for spi...

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