Silicon-on-insulator (SOI) devices and circuits are widely used in semiconductor industry for its superior natures on integration density, isolations degree. Inefficient body contact of partially-depleted SOI (PDSOI) devices cannot evacuate excess carriers which transported from the weak avalanche multiplication of pinch-off region at high drain voltage bias. These accumulated carriers elevate the internal body potential and trigger electrical effects namely the body bias effect of threshold voltage and the turn-on of parasitic bipolar junction...
