Bias and Temperature Stress Effects in IGZO TFTs and the Application of Step-Stress Testing to Increase Reliability Test Throughput

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成果类型：

期刊论文

作者：

Mohammadian, Navid;Kumar, Dinesh;Fugikawa-Santos, Lucas;Nogueira, Gabriel Leonardo;Zhang, Shouzhou;...

通讯作者：

Mohammadian, N

作者机构：

[Mohammadian, Navid; Kettle, Jeff; Mohammadian, N] Univ Glasgow, James Watt Sch Engn, Glasgow G12 8QQ, Scotland.

[Kumar, Dinesh] Bangor Univ, Sch Comp Sci & Elect Engn, Bangor LL57 2DG, Wales.

[Fugikawa-Santos, Lucas] Sao Paulo State Univ UNESP, Inst Geosci & Exact Sci, BR-13506900 Rio Claro, Brazil.

[Nogueira, Gabriel Leonardo] Sao Paulo State Univ UNESP, Sch Sci, BR-17033360 Bauru, Brazil.

[Zhang, Shouzhou] Cent South Univ Forestry & Technol, Bangor Coll, Changsha 410018, Peoples R China.

通讯机构：

[Mohammadian, N ] U

Univ Glasgow, James Watt Sch Engn, Glasgow G12 8QQ, Scotland.

语种：

英文

关键词：

Stress;Thin film transistors;Logic gates;Passivation;Voltage measurement;Stress measurement;Testing;Semiconductor device measurement;Electron traps;Threshold voltage;Bias stress;CYTOP;indium-gallium-zinc-oxide (IGZO);passivation;thin-film transistors (TFTs);voltage step stress (VSS)

期刊：

IEEE TRANSACTIONS ON ELECTRON DEVICES

ISSN：

0018-9383

年：

2024

DOI：

10.1109/TED.2024.3462693

基金类别：

Engineering and Physical Sciences Research Council (EPSRC) under Grant GEOPIC [EP/W019248/1]; Shandon Diagnostics Ltd. [13135]; University of Glasgow KTP [13135]; Fundacao de Amparo a Pesquisa no Estado de Sao Paulo (FAPESP) [2019/05620-3]; National Council for Scientific and Technological Development-Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq); Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior-Brasil (CAPES) [001]

机构署名：

本校为其他机构

院系归属：

班戈学院

摘要：

Indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) are widely used in numerous applications including displays and are emerging as a promising alternative for flexible IC production due to their high transparency, superior field-effect mobility, and low-temperature processability. However, their stability under different voltage stresses remains a concern, primarily due to carrier trapping in the gate dielectric and point defect creation. This study involves the fabrication of IGZO TFTs and their subsequent bias stress testing in linear and saturation regions. The impact of a passivat...

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Bias and Temperature Stress Effects in IGZO TFTs and the Application of Step-Stress Testing to Increase Reliability Test Throughput

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