期刊论文

中文

表面技术

1001-3660

2023

52

2

297-306

10.16490/j.cnki.issn.1001-3660.2023.02.028

本校为第一机构

目的 以K2TaF7和Ta粉为主要原料，在石墨材料表面制备TaC涂层，对于降低第三代半导体如SiC、GaN和AlN等单晶的制备成本、提高晶体品质，具有重要的价值。方法反应物在1200℃的熔盐体系中保温3h反应生成碳化物，经后续2300℃真空保温1h后得到TaC涂层材料。采用XRD和SEM对涂层的组成结构进行表征，采用拉开法对涂层的和石墨基体的结合强度进行测量，采用纳米压痕对涂层的硬度和弹性模量进表征，最后对TaC涂层的抗腐蚀性能进行了模拟测试评估和实际的SiC长晶测试。结果 熔盐法制备的TaC涂层连续地覆盖在石墨表面，保持了原始石墨的形貌，其物相组成为TaC，呈现出亮黄色，厚度约为20～40μm，涂层的...

The work aims to prepare the TaC coating on the surface of graphite material with K2TaF7and Ta powder as the main raw materials,which is of great value for reducing the preparation cost and improving the quality of third-generation semiconductors such as SiC,Gan,and AlN...MORE The work aims to prepare the TaC coating on the surface of graphite material with K2TaF7and Ta powder as the main raw materials,which is of great value for reducing the preparation cost and improving the quality of third-generation semiconductors such as SiC,Gan,and AlN.T...